Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection

doi:10.1016/j.jallcom.2020.156820

	Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection
	Jing, Jiangping 1,2,5; Chen, Zhuoyuan 1,2,3,5; Feng, Chang1,2,4,5 ; Sun, Mengmeng 1,2,5; Hou, Jian 3
	2021-01-15
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	851 页码:9
通讯作者	Chen, Zhuoyuan([email protected])
摘要	Photoelectrochemical cathodic protection is emerging as a green and environmental method to protect metals against corrosion. Graphitic carbon nitride (g-C3N4) shows great application potential in this area because of its high efficiency, high stability and low cost. However, the pristine g-C3N4 shows amphoteric properties, resulting in its failure in providing photoelectrochemical cathodic protection for the coupled metal in NaCl solution. In this work, a K&I co-doping technique was performed to modulate the band structure of g-C3N4, and an n-type g-C3N4 (n-C3N4) was obtained. The changes in the molecular structure were studied by SEM, HRTEM, XRD, EDS, XPS and FT-IR technologies. The n-type semiconductor characteristics were verified by the photoinduced i-V curves, SKP potential distributions and pH drift techniques. The n-C3N4 can generate positive photocurrent in the whole investigated potential range, making it able to provide photoelectrochemical cathodic protection for the coupled 316L stainless steel in NaCl solution. This work is very helpful for promoting the application of g-C3N4 in the fields of the photoelectric conversion and the photoelectrochemical cathodic protection. (C) 2020 Elsevier B.V. All rights reserved.
关键词	Graphitic carbon nitride Photoelectrochemical cathodic protection p/n type Doping Photocurrent direction
DOI	10.1016/j.jallcom.2020.156820
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[41906034]; National Natural Science Foundation of China[41676069]; National Natural Science Foundation of China[41976036]; China Postdoctoral Science Foundation[2019M652278]; Key Research and Development Program of Shandong Province[2019GHY112066]; Key Research and Development Program of Shandong Province[2019GHY112085]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000579868900061
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：38[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.qdio.ac.cn/handle/337002/168972
专题	海洋环境腐蚀与生物污损重点实验室
通讯作者	Chen, Zhuoyuan
作者单位	1.Chinese Acad Sci, Inst Oceanol, Key Lab Marine Environm Corros & Biofouling, 7 Nanhai Rd, Qingdao 266071, Peoples R China 2.Chinese Acad Sci, Ctr Ocean Megasci, 7 Nanhai Rd, Qingdao 266071, Peoples R China 3.Luoyang Ship Mat Res Inst LSMRI, State Key Lab Marine Corros & Protect, Wenhai Rd, Qingdao 266237, Peoples R China 4.Univ Chinese Acad Sci, 19 Jia Yuquan Rd, Beijing 100039, Peoples R China 5.Pilot Natl Lab Marine Sci & Technol Qingdao, Open Studio Marine Corros & Protect, 1 Wenhai Rd, Qingdao 266237, Peoples R China
第一作者单位	中国科学院海洋研究所; 中国科学院海洋大科学研究中心
通讯作者单位	中国科学院海洋研究所; 中国科学院海洋大科学研究中心
推荐引用方式 GB/T 7714	Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang,et al. Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,851:9.
APA	Jing, Jiangping,Chen, Zhuoyuan,Feng, Chang,Sun, Mengmeng,&Hou, Jian.(2021).Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection.JOURNAL OF ALLOYS AND COMPOUNDS,851,9.
MLA	Jing, Jiangping,et al."Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection".JOURNAL OF ALLOYS AND COMPOUNDS 851(2021):9.

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